Printed in great britain current transport in metalsemiconductormetal msm structures s. Numerical simulation of metal interconnects of power. Metalsemiconductor contacts monographs in electrical and. Sir jagadish chandra bose applied for a us patent for a metalsemiconductor diode in. Ohmic contacts to gallium arsenide devices materion. Krupanidhi a, a materials research centre, indian institute of science, bangalore 560 012, india. In order to set up a list of libraries that you have access to, you must first login or sign up. Twodimensional materials inserted at the metalsemiconductor. In addition to different device and circuit applications, schottky contacts can also be used as test vehicles for investigating the physical and electrical properties of a semiconductor material and its surfaces. Unlimited viewing of the articlechapter pdf and any associated supplements and figures.
Interfaces between metal and semiconductor may be found almost everywhere in contemporary electronics. Semiconductor device and material characterization dr. Metal semiconductor interfaces rectifying schottky junction nonrectifying ohmic contacts 3. This inevitably leads to metalsemiconductor contacts, and the impact of such junctions on the device must be considered. The two terminals of moscapacitor consist of the main structures in mos devices and it is the simplest structure of mos devices. Measurement of contact resistivity at metal tin sulfide sns interfaces chuanxi yang,1,a leizhi sun,1,a riley e. Filled symbols represent sbh measured by iv method on ptype gaas, while open symbols are the. Fmde 6 where fs and fm are fermidirac distribution functions in metal and semiconductor. Rhoderick, 1988, clarendon press, oxford university press edition, in english 2nd ed. Alan doolittle school of electrical and computer engineering. The difference between the fermi energy and the vacuum level is the workfunction.
B is significantly higher than the thermal energy kt, the semiconductor is depleted near the metal and behaves as a schottky barrier. Higher schottky barrier leads to rectifying contact but in case it is close to zero it forms an ohmic contact. Metalsemiconductor contacts 1988 edition open library donate. Nov 02, 2015 metalsemiconductor contacts kasif nabi imi2015007 department of microelectronics indian institute of information technology allahabad 2nd november 2 november 2015 1 2. Metaloxidesemiconductor mos fundamentals engineering. Metalsemiconductor interfaces rectifying schottky junction nonrectifying ohmic contacts 3. The doping profile is an important contributing factor to the currentvoltage relationship of a device. This book deals with the basic science of such contacts, and discusses the electrical properties that. It is well known that the quality of metalsemiconductor contacts plays an. Topics covered include the factors that determine the height of the schottky ba.
Often the metal is there just to serve as a contact to pn junctions in the semiconductor. General considerations for improving photovoltage in metal. Metalsemiconductormetal photodetectors rp photonics. In this section we aim to look simply at the physical models that can be used to understand the electrical properties that can arise from these contacts, and then briefly discuss how deviations of these models can occur in.
It is well known that the quality of metalsemiconductor contacts plays an important role in the performance of various semiconductor devices and integrated circuits. By having proper doping profiles and having a smooth interfacial contact layer. Metal contacts to 2dmaterials for device applications. Characterization of metalsemiconductor contacts using. Nonohmic contacts come in a number of forms, such as pn junction, schottky barrier, rectifying heterojunction, or breakdown junction. It is thus a kind of schottky barrier detector, but with two schottky junctions. Metal semiconductor contacts energetic barriers are most often described by the electron affinity model eam. Description and verification of the fundamental current. Metalsemiconductor interfaces rectifying schottky junction nonrectifying ohmic contacts 4. In this chapter, the basic device physics, the electrical and transport properties, and the formation and characterization of various metalsemiconductor contacts are presented. Before discussing the behaviour of a metalsemiconductor boundary, it is first necessary to introduce the concept of the work function. Nevertheless, eam explains several aspects depletion widths, capacitance, general iv shape, etc of ohmic and.
The metal oxide semiconductor field effect transistor mosfet is one of the cornerstones of modern semiconductor technology. Metalsemiconductor contacts and devices presents the physics, technology, and applications of metalsemiconductor barriers in digital integrated circuits. This second edition brings a greatly expanded treatment of th. Herein, we investigate and analyze the effect of interfacial oxides and. The general structure is a lightly doped ptype substrate, into which two regions, the source and the drain, both of heavily doped ntype semiconductor have been embedded. However, it was not until the twentieth century that the atomic theory of matter became firmly established as an unassailable, demonstrated fact. Selfaligned via and trench for metal contact in iiiv semiconductor devices jun fei zhenga intel corporation, santa clara, california 95052 hilmi volkan demir nanotechnology research center, department of physics, and department of electrical and electronic engineering, bilkent university, bilkent, 06800 ankara, turkey. Metal semiconductor contacts and devices issn, cohen. Metal to semiconductor ms junctions are of great importance since they are present in every semiconductor device. Books, images, historic newspapers, maps, archives and more. Theory when two substances are in contact, between them there is a charge. Today we will use band diagrams to describe what happens when we bring a metal into contact with a. For a sufficiently large schottky barrier height, where. A short discussion is also given of practical contacts and their application in semiconductor technology, and a comparison is made with pn junctions.
Lecture 17 metalsemiconductor junction march 14, 2007 contents. Metalsemiconductor ohmic contacts stanford university. Derivation of the metalsemiconductor junction current 3. Whether a given metalsemiconductor junction is an ohmic contact or a schottky barrier depends on the schottky barrier height. Indeed, the ancient greeks put this hypothesis forward over two millennia ago. Metal semiconductor contacts and devices issn kindle edition by cohen, simon s. At the same time, such contacts cannot be assumed to have a resistance as low as that of two connected metals. The lectures map onto the individual chapters in the book. Brandt, sang bok kim, xizhu zhao, jun feng, tonio buonassisi, and roy g. Semiconductors interfaces with metals skip to content skip to search. Loya bell telephone laboratories, incorporated, murray hill, new jersey 07974, u. The work function of a material is the energy required to remove an electron from the level of the chemical potential and give it enough energy to escape to infinity and arrive there with zero energy.
The present invention relates to a metalsemiconductor contact comprising a semiconductor layer and comprising a metallization applied to the semiconductor layer, a high dopant concentration being introduced into the semiconductor layer such that a nonreactive metalsemiconductor contact is formed between the metallization and the semiconductor layer. The zero of electrostatic potential has been taken with respect to the metal fermi level. The metalsemiconductor ms contact is an important component in the performance of most semiconductor devices in the solid state. Written for semiconductor technologists and physicists engaged in research on semiconductor interfaces, this text emphasizes practical implications wherever they are relevant to device technology. The physics and chemistry of the schottky barrier height. Krupanidhi a, a materials research centre, indian institute of science, bangalore 560 012, india b central research laboratory, bharat electronics, bangalore 560 0, india received 7 september 1999. The rectification property of metalsemiconductor contacts was discovered by ferdinand braun in 1874 using mercury metal contacted with copper sulfide and iron sulfide semiconductors. Brandt,2 sang bok kim,1 xizhu zhao,1 jun feng,1 tonio buonassisi,2 and roy g.
Metalsemiconductor contacts 1988 edition open library. We need to understand several key energies in the metal and the semiconductor the topmost energy is the vacuum level, e 0. Ee311 saraswat ohmic contacts 5 for a tunneling contact the net semiconductor to metal current is given by jsm at k. The semiconductor then behaves like a metal and for this reason is called a semimetal. Introduction formation of barrier current transport processes measurement of barrier height device structures ohmic contact.
Metalintrinsic semiconductor band bending, a no applied bias, j 0. Derivation of the diffusion current we start from the expression for the total current and then integrate it over the width of the depletion region. Highly efficient mis photoanodes require interfacial surface passivating oxides and high workfunction metals to produce a high photovoltage. Work purpose the determination of the potential difference that appears at the contact surface between a metal and a semiconductor, potential difference that is known under the name of contact, or diffusion, bias. Metalsemiconductor contacts schottky contacts metal on lightly doped silicon rectifying ohmic contacts metal on heavily doped silicon low resistance 2 november. How ever, irregularities of the metal film such as varia w. A fundamental study of advanced metalsemiconductor contacts. Measurement of contact resistivity at metaltin sulfide sns interfaces chuanxi yang, leizhi sun, riley e. Attractive candidates for semiconductor device contacts minhyun lee, yeonchoo cho, kyungeun byun, keun wook shin, seonggeol nam. Download citation metalsemiconductor contacts in this chapter, the basic device physics, the electrical and transport properties, and the formation and. Schottky contacts using conducting probe atomic force microscopy cafm.
This whole concept of metalsemiconductor contacts in conventional semiconductors have already been studied and developed commercially for fabricating devices. Metal semiconductor interfaces rectifying schottky junction nonrectifying ohmic contacts 4. The term metal silicon contact includes silicidesi contacts. Basically, there are two types of ms contacts that are widely used in semiconductor devices.
For example, a schottky diode can be used to study bulk defects and interface properties of a metalsemiconductor system. Schottky barrier, or as an ohmic contact, depending on the characteristics of. Williams, metalsemiconductor contacts, plenum press, 1984. In modern semiconductor technology, contacts between semiconducting devices and the metal conductors that connect them with the rest of the system are of fundamental importance. Metalsemiconductor contacts kasif nabi imi2015007 department of microelectronics indian institute of information technology allahabad 2nd november 2 november 2015 1 2. As the name implies, the ms junction is that a metal and a semiconductor material are contacted closely. Generally the term ohmic contact implicitly refers to an ohmic contact of a metal to a semiconductor, where achieving ohmic contact resistance is possible but requires. Selfaligned via and trench for metal contact in iiiv. Basic semiconductor material science and solidstate physics all terrestrial materials are made up of atoms. Metalsemiconductor contacts monographs in electrical and electronic engineering rhoderick, e. Metalinsulatorsemiconductor mis photoelectrodes offer a simple alternative to the traditional semiconductorliquid junction and the conventional pn junction electrode. As with all of these lecture slides, i am indebted to dr.
A metalsemiconductormetal photodetector msm detector is a photodetector device containing two schottky contacts, i. Metal semiconductor contacts are an obvious component of any semiconductor device. Rhoderick, 9780198593362, available at book depository with free delivery worldwide. Rhoderick, metalsemiconductor contacts, clarendon press, oxford 1978. Then set up a personal list of libraries from your profile page by clicking on your user name at the top right of any screen.
The activation energy is independent of the concentration. The electrical conductivity of a semiconductor is very much affected. Fermi level position of ideal metal contacts to gaas. Semiconductor materials, devices, and fabrication and the associated media content in the dvds provide an understanding of the materials, devices, and processing techniques used in the current microelectronics industry. Barrier height ohmic contact schottky barrier schottky diode schottky contact. Ideal metalsemiconductor junction outside equilib rium reading assignment. They can behave either as a schottky barrier or as an ohmic contact dependent on the characteristics of the interface. A short discussion is also given of practical contacts and their application in. Contact resistance to a thin semiconductor layer print file in pdf format.
Buy online, pick up in store is currently unavailable, but this item may be available for instore purchase. Doitpoms tlp library introduction to semiconductors metal. Writing a book on semiconductor device physics and design is never complete and probably never completely satisfying. The 2 dvds include 32 lectures, approximately an hour each. Search for library items search for lists search for contacts search for a library. Importance of metal semiconductor contacts is due to l ohmic metal semiconductor junctions e. Derivation of the metalsemiconductor junction current. Characterization of metal semiconductor contacts using circular transmission line measurement results. Gilbert ece 340 lecture 35 111611 ideal metalsemiconductor contacts what do the band diagrams look like. Eects of thin oxide in metalsemiconductor and metal. Numerical simulation of metal interconnects of power semiconductor devices maxim ershov, andrew tcherniaev, yuri feinberg, philipp lindorfer, william french, and peter hopper. The energy needed to remove an electron from the metal is the work function, q.
Pdf metalsemiconductor contact in organic thin film. Metalsemiconductor contacts are an obvious component of any semiconductor device. Doitpoms tlp library introduction to semiconductors. In particular, a large mismatch between the fermi energy of the metal and semiconductor can result is a highresistance rectifying contact. In this chapter, we are concerned with the basic physical principles, electrical properties, and applications of the metalsemiconductor contacts and devices. It is well known that the quality of metal semiconductor contacts plays an important role in the performance of various semiconductor devices and integrated circuits. In the case of ptype doping, the semiconductor is said to be degenerate when the fermi level is below the top of the valence band. Therefore, its essential to understand the mechanisms and characteristics of how mosc operates. What does one have to do for a metalsemiconductor junction to become an ohmic contact. Metalsemiconductor contacts fermi level pinning is the lack of barrier height modulation with metal work function due to either large density of intrinsic states. Recently, we have developed silicon carbide schottky barrier diodes that. In this chapter, we are concerned with the basic physical principles, electrical properties, and applications of the metal semiconductor contacts and devices. Metaltosemiconductor ms contacts are present in every semiconductor.
At other times, the metal semiconductor interface itself performs essential electronic functions. Metallic contact between mos2 and ni via au nanoglue cover page pdf available in small 1422 may 2018 with 150 reads how we measure reads. The metal semiconductor ms contact is an important component in the performance of most semiconductor devices in the solid state. Us7560783b2 metalsemiconductor contact, semiconductor. Department of electronics engineering, national chiao tung university, hsinchu, taiwan. Metal semiconductor contact anchit biswas techno india,saltlake 2. Metalsemiconductor contact in organic thin film transistors article pdf available in journal of materials chemistry 1845. At other times, the metalsemiconductor interface itself performs essential electronic functions. Twodimensional materials inserted at the metalsemiconductor interface. Metalsemiconductors contacts engineering libretexts. Properties of metal semiconductor contacts1 maintained constant by the electron dynamics in the and metal.
Before discussing the behaviour of a metal semiconductor boundary, it is first necessary to introduce the concept of the work function. Eects of thin oxide in metalsemiconductor and metal insulatorsemiconductor epigaas schottky diodes mantu kumar hudait a,b, s. Topics covered include the currentvoltage relationship, the capacitance of rectifying contacts, and practical methods of fabricating contacts. Topics covered include the factors that determine the height of the schottky barrier, its currentvoltage characteristics, and its capacitance.
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